At IBM, work is more than a job – it’s a calling: To build. To design. To code. To consult. To think along with clients and sell. To make markets. To invent. To collaborate. Not just to do something better, but to attempt things you’ve never thought possible. Are you ready to lead in this new era of technology and solve some of the world’s most challenging problems? If so, lets talk.Your Role and ResponsibilitiesIBM Research in Albany, NY is seeking a device scientist to work on analysis and development of Magnetoresistive Random Access Memory (MRAM) devices. Candidates with a track record of innovation and strong interest in technology development are encouraged to apply.
This role requires a strong technical understanding of magnetic tunnel junction (MTJ) device characteristics relevant to producing functional MRAM circuits. We encourage all candidates with a broad understanding of magnetoelectronics, spintronics, and magnetism to inquire. The candidate will work as part of a cross-functional team, so experience in communication of data analysis results and demonstrated teamwork skills are essential.
- Evaluation of MTJ device performance via analysis, visualization, and interpretation of device test data
- Feedback to improve MTJ stack performance based on device analysis
- Generation and assessment of novel MTJ device architectures
- Ability to identify performance gaps of the MTJ stack and process/integration in order to propose routes for improvement
Required Technical and Professional Expertise
- Evaluation of MTJ device performance via analysis, visualization, and interpretation of device test data (basic)
- Generation and assessment of novel MTJ device architectures (basic)
- Ability to identify performance gaps of the MTJ stack and process/integration in order to propose routes for improvement (basic)
Preferred Technical and Professional Expertise
- Programming skills for custom and automated data analysis (basic)
- Knowledge of basic statistics (basic)
- Experience working on MRAM technology (basic)