Advanced Characterization – Transmission Electron Microscopy Intern
- San Jose, CA, USCambridge, MA, USYorktown Heights, NY, US
- Research
- Intern
Advanced Characterization – Transmission Electron Microscopy Intern
- San Jose, CA, USCambridge, MA, USYorktown Heights, NY, US
- Research
- Intern
IBM Research Scientists are charting the future of Artificial Intelligence, creating breakthroughs in computing, discovering how blockchain will reshape the enterprise, and much more. Join a team that is dedicated to applying science to some of today’s most complex challenges, whether it’s discovering a new way for doctors to help patients, teaming with environmentalists to clean up our waterways or enabling retailers to personalize customer service.
The job involves the use of advanced characterization tooling and equipment to help fabricate and characterize advanced semiconductor devices on 200mm silicon wafers in the FAB.
Your Role and Responsibilities
The graduate student candidate will use both focused ion beam (FIB) tools to prepare sample of thin films and TEM microscopes to determine microstructure of these thin films including grain orientation and sizes (and their evolution) as well as elemental mapping of grains vs. grain boundaries. The candidate is expected to work closely with engineers and the research teams. The work is centered around IBM’s most advanced R&D efforts at its premier research and development site. Good communication skills and the ability to handle fast-paced, complex work is essential.
Required Technical and Professional Expertise
- Applicants should be PhD & MS students pursuing graduate studies.
- Experience with TEM and scanning TEM (STEM). Imaging and electron diffraction.
- Experience with grain size distribution and texture mapping.
- Strong computer and analytical skills, experience with TEM analysis software.
Preferred Technical and Professional Expertise
- Experience with preparation of thin lamellas using focused ion beam tools.
- Experience with precession electron diffraction (PED) using Nanomegas system.
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